Magnesium in PDB 4g7y: Crystal Structure of Voltage Sensing Domain of Ci-Vsp with Fragment Antibody (R217E, 2.8 A)

The structure of Crystal Structure of Voltage Sensing Domain of Ci-Vsp with Fragment Antibody (R217E, 2.8 A), PDB code: 4g7y was solved by Q.Li, with X-Ray Crystallography technique. A brief refinement statistics is given in the table below:

Resolution Low / High (Å)	104.80 / 2.80
Space group	P 65 2 2
Cell size a, b, c (Å), α, β, γ (°)	121.010, 121.010, 229.570, 90.00, 90.00, 120.00
R / Rfree (%)	20.6 / 26.1

The structure of Crystal Structure of Voltage Sensing Domain of Ci-Vsp with Fragment Antibody (R217E, 2.8 A) also contains other interesting chemical elements:

Chlorine

(Cl)

1 atom

The binding sites of Magnesium atom in the Crystal Structure of Voltage Sensing Domain of Ci-Vsp with Fragment Antibody (R217E, 2.8 A) (pdb code 4g7y). This binding sites where shown within 5.0 Angstroms radius around Magnesium atom.
In total only one binding site of Magnesium was determined in the Crystal Structure of Voltage Sensing Domain of Ci-Vsp with Fragment Antibody (R217E, 2.8 A), PDB code: 4g7y:

Magnesium binding site 1 out of 1 in the Crystal Structure of Voltage Sensing Domain of Ci-Vsp with Fragment Antibody (R217E, 2.8 A)


Mono view


Stereo pair view

A full contact list of Magnesium with other atoms in the Mg binding site number 1 of Crystal Structure of Voltage Sensing Domain of Ci-Vsp with Fragment Antibody (R217E, 2.8 A) within 5.0Å range: probe atom residue distance (Å) B Occ L:Mg302 b:46.7 occ:1.00 O H:HOH305 2.4 43.9 1.0 O H:HOH302 2.4 38.6 1.0 O H:HOH304 2.6 33.6 1.0 O L:HOH410 2.6 29.9 1.0 O H:HOH303 2.7 34.4 1.0 OD2 L:ASP167 3.0 62.5 1.0 O L:HOH409 3.3 39.7 1.0 CA L:ASP167 3.8 46.1 1.0 CG L:ASP167 3.8 57.9 1.0 CB L:ASP167 4.2 54.1 1.0 O L:GLU165 4.2 41.8 1.0 N L:ASP167 4.4 40.4 1.0 CE1 H:HIS170 4.5 45.7 1.0 ND1 H:HIS170 4.6 43.8 1.0 OD1 L:ASP167 4.8 60.3 1.0 O L:GLN166 4.8 47.7 1.0 C L:GLN166 4.8 40.8 1.0 C L:ASP167 4.9 47.9 1.0 N L:SER168 5.0 50.9 1.0

Q.Li, M.Paduch, S.Wanderling, R.E.Hulse, S.Koide, A.Kosiakoff, E.Perozo. Structural Rearrangement in Voltage Sensing Domain of Ci-Vsp To Be Published.